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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM
DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 440-520MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * 66 x 21 x 9.8 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
2
3
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
ORDERING INFORMATION: ORDER NUMBER RA30H4452M-E01 RA30H4452M-01
(Japan - packed without desiccator)
SUPPLY FORM Antistatic tray, 10 modules/tray
RA30H4452M
MITSUBISHI ELECTRIC 1/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=440-520MHz, ZG=ZL=50 RATING 17 6 100 45 -30 to +110 -40 to +110 UNIT V V mW W C C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in IGG -- -- Frequency Range Output Power Total Efficiency 2
nd
CONDITIONS
MIN
440 30
TYP
MAX
520
UNIT
MHz W %
VDD=12.5V, VGG=5V, Pin=50mW
40 -25 3:1 1
Harmonic
dBc -- mA -- --
Input VSWR Gate Current Stability Load VSWR Tolerance
VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1
No parasitic oscillation No degradation or destroy
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H4452M
MITSUBISHI ELECTRIC 2/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
rd
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
60
Pout
2nd, 3 HARMONICS versus FREQUENCY
-20 100 TOTAL EFFICIENCY -30 -40 -50
2nd V DD=12.5V V GG=5V Pin=50mW
OUTPUT POWER Pout(W)
50 INPUT VSWR in (-) 40 30 20 10
T
V DD=12.5V V GG=5V Pin=50mW
80 60 40 20
HARMONICS (dBc)
T(%)
3rd
-60 -70 430 440 450 460 470 480 490 500 510 520 530 FREQUENCY f(MHz)
in
0 0 430 440 450 460 470 480 490 500 510 520 530 FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 50 40 30 20 10 0 -10 -5 0 5 10 15 20 INPUT POWER P in(dBm)
f=440MHz, V DD=12.5V, V GG=5V Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
12 10 DRAIN CURRENT IDD(A) 8 OUTPUT POWER Pout(dBm) 60
Gp
12
Pout
POWER GAIN Gp(dB)
50 40 30 20 10 0 -10 -5 0 5
IDD
10 8 6 4 DRAIN CURRENT 12 10 8 6 DRAIN CURRENT IDD(A) DRAIN CURRENT IDD (A) 4
f=520MHz, V DD=12.5V, V GG=5V
IDD
6 4 2 0
f=470MHz, V DD=12.5V, V GG=5V
2 0
10
15
20
INPUT POWER P in(dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout(dBm) 50 40 30
IDD
Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
12 OUTPUT POWER Pout(dBm) 10 8 6 4 DRAIN CURRENT IDD(A) 60 50 40 30
IDD
Gp Pout
POWER GAIN Gp(dB)
20 10 0 -10 -5 0 5 10 15 20 INPUT POWER P in(dBm)
f=490MHz, V DD=12.5V, V GG=5V
POWER GAIN Gp(dB)
20 10 0 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)
2 0
2 0
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
90 OUTPUT POWER Pout(W) 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 DRAIN VOLTAGE V DD (V) 14 16
IDD
f=440MHz, V DD=12.5V, V GG=5V Pout
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
18 OUTPUT POWER Pout(W) 16 DRAIN CURRENT IDD (A) 14 12 10 8 6 4 2 0 90 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 DRAIN VOLTAGE V DD (V) 14 16
IDD
f=470MHz, V DD=12.5V, V GG=5V Pout
18 16 14 12 10 8 6 4 2 0
RA30H4452M
MITSUBISHI ELECTRIC 3/9
IDD(A)
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
90 OUTPUT POWER P out(W) 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 DRAIN VOLTAGE V DD(V) 16
IDD
f=490MHz, VDD=12.5V, VGG=5V Pout
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
90 OUTPUT POWER P out(W) 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 DRAIN VOLTAGE V DD(V) 16
IDD
18 16 DRAIN CURRENT IDD(A) 14 12 10 8 6 4 2 0
18 14
Pout
12 10 8 6 4 2 0
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out(W) 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) 5
IDD
f=440MHz, VDD=12.5V, VGG=5V Pout
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out(W) DRAIN CURRENT IDD(A) 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) 5
IDD
f=470MHz, VDD=12.5V, VGG=5V Pout
12 10 8 6 4 2 0
12 DRAIN CURRENT IDD(A) DRAIN CURRENT I DD(A) 10 8 6 4 2 0
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out(W) 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) 5
IDD
f=490MHz, VDD=12.5V, VGG=5V Pout
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out(W) DRAIN CURRENT IDD(A) 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) 5
IDD
f=520MHz, VDD=12.5V, VGG=5V
12 10 8 6 4 2 0
12 10
Pout
8 6 4 2 0
RA30H4452M
MITSUBISHI ELECTRIC 4/9
DRAIN CURRENT IDD(A)
f=520MHz, VDD=12.5V, VGG=5V
16
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
OUTLINE DRAWING (mm)
66.0 0.5 3.0 0.3 7.25 0.8 60.0 0.5 51.5 0.5 2-R2 0.5
21.0 0.5
9.5 0.5
5 1 2 3 4
14.0 1
2.0 0.5
O0.45 0.15
12.0 1 16.5 1 43.5 1 55.5 1
3.1 +0.6/-0.4
0.09 0.02
7.5 0.5 (50.4) 2.3 0.3
4.0 0.3 (9.88)
17.0 0.5
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
RA30H4452M
MITSUBISHI ELECTRIC 5/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
TEST BLOCK DIAGRAM
Power Meter 1 2
DUT
3 4
5
Spectrum Analyzer
Signal Generator
Attenuator
Preamplifier
Attenuator
Directional Coupler
ZG=50
ZL=50
Directional Coupler
Attenuator
Power Meter
C1
C2
C1, C2: 4700pF, 22uF in parallel
+ DC Power Supply VGG
+ DC Power Supply VDD
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
4
5
RA30H4452M
MITSUBISHI ELECTRIC 6/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during srewing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichlorethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50m (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 0.4 to 0.6Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The soldering temperature shall be lower than 260C for maximum 10 seconds, or lower than 350C for maximum 3 seconds. Ethyl Alcohol is recommend to remove flux. Trichlorethylene type solvents must not be used (they may cause bubbles in the coating of the transistor chips, which can lift off bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T=40% VDD Stage (W) (W) (C/W) (A) (V) st 1 0.05 1.5 5.0 0.30 nd 12.5 1.5 9.0 2.4 1.50 2 rd 3 9.0 30.0 1.2 4.20 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.30A - 1.5W + 0.05W) x 5.0C/W = Tcase + 11.5 C Tch2 = Tcase + (12.5V x 1.50A - 9.0W + 1.50W) x 2.4C/W = Tcase + 27.0 C Tch3 = Tcase + (12.5V x 4.20A - 30.0W + 9.0W) x 1.2C/W = Tcase + 37.8 C For long term reliability the module case temperature Tcase is better kept below 90C. For an ambient temperature Tair=60C and Pout=30W the required thermal resistance R th (case-air) = ( T case - Tair) / ( (Pout / T ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (30W/40% - 30W + 0.05W) = 0.67 C/W When mounting the module with the thermal resistance of 0.67 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 41.5 C Tch2 = Tair + 57.0 C Tch3 = Tair + 67.8 C 175C maximum rating for the channel temperature ensures application under derated conditions.
RA30H4452M
MITSUBISHI ELECTRIC 7/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around VGG=3.5V the output power and Drain current increases strongly. Around VGG=4V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance ZL=50 ? c) Is the source impedance ZG=50 ? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality: MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than 20 years experience, field proven in several 10 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found.
Keep
safety
first
in
your
circuit
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RA30H4452M
MITSUBISHI ELECTRIC 8/9
2 Dec 2002
SALES CONTACT
JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: scdinfo@mehk.com Phone: +852 2510-0555 Fax: +852 2510-9822 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: semicon@asia.meap.com Phone: +65 64 732 308 Fax: +65 64 738 984 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: customerservice@edg.mea.com Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-3670 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: semis.info@meg.mee.com Phone: +33-1-55685-668 Fax: +33-1-55685-739 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10 Fax: +39-039-6053-212 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: semis.info@meuk.mee.com Phone: +44-1707-278-900 Fax: +44-1707-278-837
AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245
RA30H4452M
MITSUBISHI ELECTRIC 9/9
2 Dec 2002

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